Особливості генерування енергетичних станів у напівпровіднику Lu1 – xVxNiSb
A comprehensive study of the crystal and electronic structures, thermodynamic, kinetic, energy, and magnetic properties of the Lu1−xVxNiSb semiconductor (x = 0÷0.10) has revealed the possibility for impurity V atoms to simultaneously occupy different crystallographic positions. At the same time, def...
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| Видавець: | Publishing house "Academperiodika" |
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| Дата: | 2023 |
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Publishing house "Academperiodika"
2023
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023006 |
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Ukrainian Journal of Physics| Резюме: | A comprehensive study of the crystal and electronic structures, thermodynamic, kinetic, energy, and magnetic properties of the Lu1−xVxNiSb semiconductor (x = 0÷0.10) has revealed the possibility for impurity V atoms to simultaneously occupy different crystallographic positions. At the same time, defects of the acceptor or donor nature are generated in the crystal structure of the Lu1−xVxNiSb solid solution, and the corresponding energy states appear in the band gap ϵg. The concentration ratio of donor-acceptor states determines the position of the Fermi level ϵF and the mechanisms of electrical conductivity of Lu1−xVxNiSb. The results of the modeling of thermodynamic and transport properties of the semiconductor are consistent with experimental data. Understanding the mechanism of energy state generation in the semiconductor Lu1−xVxNiSb allows the modeling and production of new thermoelectric materials with a high efficiency of converting the thermal energy into the electrical one. |
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