Виготовлення тонких плівок з Mn4Si7/Si(111), CrSi2/Si(111) та CoSi2/Si(111) і оцінка їхніх оптично прямих та непрямих заборонених зон

Now, silicon-based heterostructured nanocomposites are of great interest. Despite the fact that silicon semiconductor films (crystalline, polycrystalline, amorphous) have been systematically studied for a long time, heterostructural films are new materials, the study of which began relatively recent...

Повний опис

Збережено в:
Бібліографічні деталі
Видавець:Publishing house "Academperiodika"
Дата:2024
Автори: Dovranov, K.T., Normuradov, M.T., Davranov, Kh.T., Bekpulatov, I.R.
Формат: Стаття
Мова:English
Опубліковано: Publishing house "Academperiodika" 2024
Теми:
Онлайн доступ:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023088
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!

Організація

Ukrainian Journal of Physics
Опис
Резюме:Now, silicon-based heterostructured nanocomposites are of great interest. Despite the fact that silicon semiconductor films (crystalline, polycrystalline, amorphous) have been systematically studied for a long time, heterostructural films are new materials, the study of which began relatively recently. We will produce and investigate the properties of heterostructured Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) thin films using infrared and ultraviolet spectroscopies. Absorption, transmission, and diffuse reflectance spectra are obtained applying FTIR spectroscopy instruments and a UV spectrophotometer. The band gap energies calculated from the transmission spectra are in the interval 0.32–1.31 eV for films deposited on the silicon substrates and in the interval 0.36–1.25 eV for the glass substrates.