Часи життя носіїв заряду у вузькощілинному Hg1–xCdxTe при міжзонному та внутрішньозонному збудженні
The lifetimes of photoconductive decay carriers under interband and intraband excitations are studied in epitaxial layers of narrow-gap Hg1−xCdxTe (x ∼0.2). Samples with large distances (>3 mm) between small-area electrical contacts and small distances (∼10 μm) with largearea contacts (THz an...
Збережено в:
| Видавець: | Publishing house "Academperiodika" |
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| Дата: | 2023 |
| Автори: | , , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Publishing house "Academperiodika"
2023
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023114 |
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Організація
Ukrainian Journal of Physics| Резюме: | The lifetimes of photoconductive decay carriers under interband and intraband excitations are studied in epitaxial layers of narrow-gap Hg1−xCdxTe (x ∼0.2). Samples with large distances (>3 mm) between small-area electrical contacts and small distances (∼10 μm) with largearea contacts (THz antennas) are studied. The lifetimes of decay carriers for intraband and interband excitations are measured and compared. It has been established that, in samples with n-type conductivity, the lifetimes are comparable (in the interval of 40 ns) for both methods of excitation. At the same time, in samples with a small distance between contacts and a large area (bow-tie antennas), contacts make the main contribution to recombination. The elimination of recombination at the contacts leads to a lifetime of ∼10−6 s. |
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