Rf discharge dissociative mode in NF3 and SiH4
eKhNUIR
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Rf discharge dissociative mode in NF3 and SiH4
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| Creator |
Lisovskiy, V.
Booth, Jean-Paul Landry, K. Douai, D. Cassagne, V. Yegorenkov, V. |
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| Subject |
plasma physics
gas discharges |
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| Description |
This paper shows that the rf capacitive discharge in NF3 and SiH4 can burn in three possible modes: weak-current α-mode, strong-current γ -mode and dissociative δ -mode. This new dissociative δ-mode is characterized by a high dissociation degree of gas molecules (actually up to 100% in NF3 and up to 70% in SiH4), higher resistivity and a large discharge current. On increasing rf voltage first we may observe a weak-current α-mode (at low NF3 pressure the α-mode is absent). At rather high rf voltage when a sufficiently large number of high energy electrons appear in the discharge, an intense dissociation of gas molecules via electron impact begins, and the discharge experiences a transition to the dissociative δ-mode. The dissociation products of NF3 and SiH4 molecules possess lower ionization potentials, and they form an easily ionized admixture to the main gas. At higher rf voltages when near-electrode sheaths are broken down, the discharge experiences a transition to the strong-current γ -mode. |
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| Date |
2010-11-17T19:42:26Z
2010-11-17T19:42:26Z 2007-10 |
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| Type |
Article
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| Identifier |
J. Phys. D: Appl. Phys. 40 (2007) 6631–6640
http://dspace.univer.kharkov.ua/handle/123456789/1700 |
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| Language |
en
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| Relation |
;doi:10.1088/0022-3727/40/21/023
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| Publisher |
JOURNAL OF PHYSICS D: APPLIED PHYSICS
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