Features of the Crystal and Electronic Structures of the Zr1-xYxNiSn Semiconductor
Електронний науковий архів Науково-технічної бібліотеки Національного університету "Львівська політехніка"
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Features of the Crystal and Electronic Structures of the Zr1-xYxNiSn Semiconductor
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| Creator |
Krayovskyy, Roman
Romaka, Vitaly Bovgyra, Oleg |
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| Subject |
temperature
thermometry thermometric element semiconductor |
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| Description |
Crystal and electronic structures of the heavy, Y impurity, dopez ZrNiSn intermetallic semiconductor (Na=3,8*10/4,8*10cm)were investigated. It is rotined that alloing of n- ZrNiSn is accompaid arrangement of crystalline structure, the atoms of admixture occupy positions of atoms of Zr only, generating the defects of occeptor-type nature. Set area of existence of solid solution of Zr1-xYxNiSn, dependence, between the concentration of solid solution and direction and speed of drift of lever to Fermi, by the transition of conductivity dielectric-metal.
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| Date |
2010-06-07T08:56:01Z
2010-06-07T08:56:01Z 2009 |
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| Type |
Article
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| Identifier |
Krayovskyy R. Гама-сканер круговогу огляду з кодуючою маскою. / R. Krayovskyy, V. Romaka, O. Bovgyra // Computer science and engineering : proc. of the third intern. conf. of toung scientists, May 14-16, 2009, Lviv, Ukraine. - Lviv, 2009 - С. 339-340.
http://ena.lp.edu.ua:8080/handle/ntb/4109 |
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| Language |
en
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| Publisher |
Національний університет “Львівська політехніка”
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