Helium Induced Structural Disorder in Hydrogenated Nanocrystalline Silicon (nc-Si:H) Thin Films Prepared by HW-CVD Method
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Helium Induced Structural Disorder in Hydrogenated Nanocrystalline Silicon (nc-Si:H) Thin Films Prepared by HW-CVD Method
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| Creator |
Bakr, Nabeel A.
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| Subject |
HW-CVD
Hydrogenated Nanocrystalline Silicon Helium Dilution of Silane Raman Spectroscopy Structural Disorder |
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| Description |
Structural, optical and electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) films, deposited from silane (SiH4) and helium (He) gas mixture without hydrogen by hot wire chemical vapor deposition (HW-CVD) method were investigated as a function of helium dilution of silane (RHe). We observed that the deposition rate is much higher (4-33 Å/s) compared to conventional plasma enhanced chemical vapour deposited (PE-CVD) nc-Si:H films. Raman spectroscopy revealed that the crystalline volume fraction decreases with increasing He dilution of silane whereas the crystallite size remains almost constant (~ 2 nm) for the entire range of He dilution of silane studied. Furthermore, an increase in the structural disorder in the nc-Si:H films has been observed with increasing He dilution of silane. The hydrogen content was ~ 9 at. % in the film deposited at 60 % RHe and decreases rapidly as RHe increases further. The photoresponse decreases by order of 1 with increasing helium dilution of silane from 60 to 97 %. It has been concluded that adding helium gas to the silane induces the structural disorders in the hydrogenated nanocrystalline silicon (nc-Si:H) thin films prepared by HW-CVD method. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/29603 |
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| Publisher |
Сумський державний університет
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| Date |
2012-12-19T13:08:49Z
2012-12-19T13:08:49Z 2012 |
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| Type |
Article
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| Identifier |
Nabeel A. Bakr, J. Nano- Electron. Phys. 4 No 3, 03006 (2012)
http://essuir.sumdu.edu.ua/handle/123456789/29603 |
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| Language |
en
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