Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films
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| Creator |
Косяк, Володимир Володимирович
Косяк, Владимир Владимирович Kosiak, Volodymyr Volodymyrovych Опанасюк, Анатолій Сергійович Опанасюк, Анатолий Сергеевич Opanasiuk, Anatolii Serhiiovych |
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| Subject |
cadmium telluride
point defects quasichemical formalism “ab initio” approach single crystals thin films |
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| Description |
With the use of expressions obtained from the “first principles”, the ensemble of point defects was calculated, and the location of a Fermi level in undoped cadmium telluride single crystals and thin films depending on physico-technological conditions of their fabrication and annealing is determined. The model in use accounts the most complete spectrum of defects in chalcogenide, including defects in the cadmium and tellurium sublattices, and the existence of an antistructural defect on the cadmium sublattice. Calculations of the concentration of neutral and charged defects are realized for two extreme cases – full equilibrium and quenching. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30134 |
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| Publisher |
V. Lashkaryov Institute of Semiconductor Physics
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| Date |
2013-02-12T11:06:22Z
2013-02-12T11:06:22Z 2007 |
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| Type |
Article
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| Identifier |
Kosyak V. V. Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films [Текст] / V. V. Kosyak, A. S. Opanasyuk // Semiconductor Physics, Quantum Electronics & Optoelectronics. – 2007. – V. 10 (3). – P. 95-107.
http://essuir.sumdu.edu.ua/handle/123456789/30134 |
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| Language |
en
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