Simulation Based Analysis of Temperature Effect on Breakdown Voltage of Ion Implanted Co/n-Si Schottky Diode
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Simulation Based Analysis of Temperature Effect on Breakdown Voltage of Ion Implanted Co/n-Si Schottky Diode
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| Creator |
Kumar, Vibhor
Akhtar, J. Singh, Kulwant Maan, Anup Singh |
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| Subject |
Schottky diode
Breakdown voltage Ion implantation |
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| Description |
In semiconductor devices, breakdown voltage variation with temperature is a very significant study, since the reliability and performance of semiconductor devices especially depends upon the temperature. In this paper, the influence of temperature on breakdown characteristic of Ion Implanted edge terminated Co/n-Si Schottky Diode formed on n-Si epitaxial layer has been investigated by using SILVACO TCAD. It is also reported that not only resistive area present in close proximity to the edges of boron ion implanted Schottky diode are responsible for improvement in breakdown voltage but also the formation of PN junction near the edges, affect the breakdown voltage to a significant amount. The dopant concentration of epitaxial layer is 1 × 1015/cm3. The variation in reverse breakdown characteristics as a junction of temperature in the range of 300-1000 K is presented in this paper. A comparative study of breakdown voltages of Ion Implanted and as-prepared Schottky diode is also presented. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30266 |
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| Publisher |
Сумський державний університет
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| Date |
2013-03-01T12:38:15Z
2013-03-01T12:38:15Z 2012 |
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| Type |
Article
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| Identifier |
Vibhor Kumar, J. Akhtar, Kulwant Singh, Anup Singh Maan, J. Nano- Electron. Phys. 4 No 4, 04009 (2012)
http://essuir.sumdu.edu.ua/handle/123456789/30266 |
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| Language |
en
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