Preparation and Characterization of NiO Thin Films by DC Reactive Magnetron Sputtering
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Preparation and Characterization of NiO Thin Films by DC Reactive Magnetron Sputtering
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| Creator |
Reddy, Y. Ashok Kumar
Reddy, A. Mallikarjuna Reddy, A. Sivasankar Reddy, P. Sreedhara |
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| Subject |
Sputtering
NiO thin films Structural properties Optical properties Electrical properties Oxygen partial pressure. |
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| Description |
Nickel oxide (NiO) thin films were successfully deposited on Corning 7059 glass substrates at different oxygen partial pressures in the range of 1 × 10 – 4 to 9 × 10 – 4 mbar using dc reactive magnetron sputtering technique. Structural properties of NiO films showed polycrystalline nature with cubic structure along (220) orientation. The optical transmittance and band gap values of the films increased with increasing the oxygen partial pressure from 1 × 10 – 4 to 5 × 10 – 4 mbar and decreased on further increasing the oxygen partial pressure. Using Scanning Electron Microscopy (SEM), fine grains were observed at oxygen partial pressure of 5 × 10 – 4 mbar. The film resistivity decreases from 90.48 to 13.24 Ω cm with increase in oxygen partial pressure to 5 × 10 – 4 mbar and then increased on further increasing the oxygen partial pressure. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30257 |
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| Publisher |
Сумський державний університет
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| Date |
2013-02-28T13:41:25Z
2013-02-28T13:41:25Z 2012 |
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| Type |
Article
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| Identifier |
Y. Ashok Kumar Reddy, A. Mallikarjuna Reddy, A. Sivasankar Reddy, P. Sreedhara Reddy, J. Nano- Electron. Phys. 4 No 4, 04002 (2012)
http://essuir.sumdu.edu.ua/handle/123456789/30257 |
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| Language |
en
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