Investigation of the epitaxial growth of AIIIBV-N heterostructures for solar cell applications
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Investigation of the epitaxial growth of AIIIBV-N heterostructures for solar cell applications
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| Creator |
Beata S.
Vincze A. Kovac J. Radziewicz D. Pucicki D. Serafinczuk J. Tlaczala M. Kudrawiec R. |
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| Description |
The InGaAsN/GaAs heterostructures proposed in 1996 by Kondow et al. have been successfully used in telecom laser constructions on GaAs substrate. Additionally, the InGaAsN with a bandgap of 1 eV are lattice matched to both GaAs and Ge for the nitrogen and indium contents of around 3 % and 9 %, respectively. These features make this semiconductor an ideal candidate for high-efficiency multijunction solar cells (MJSCs) based on the Ge/InGaAsN/GaAs/InGaP structure. The growth technology of the GaAsN alloy-based diluted nitrides is very difficult because of the large miscibility gap between GaAs and GaN. |
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| Publisher |
Видавництво СумДУ
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| Date |
2011-11-28T09:04:59Z
2011-11-28T09:04:59Z 2011 |
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| Type |
Article
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| Identifier |
Investigation of the epitaxial growth of AIIIBV-N heterostructures for solar cell applications [Текст] / S. Beata, D. Radziewicz, D. Pucicki et al.
// Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. - Sumy : Sumy State University, 2011. - V.2, P.І. - C. 211-217.
http://essuir.sumdu.edu.ua/handle/123456789/20971 |
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| Language |
en
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