Study of Photoluminescence Behaviour of Porous Silicon Samples Prepared at 20 mA Current Density
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Study of Photoluminescence Behaviour of Porous Silicon Samples Prepared at 20 mA Current Density
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| Creator |
Gill, Fateh Singh
Gupta, Himanshu Purohit, L.P. Pal, Pankaj K. Sharma, Kiran Dhiman, Neeraj Kumar, R. Mehra, R.M. |
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| Subject |
Photoluminescence
Quantum dots Nanoparticles |
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| Description |
The paper presents a study on a series of porous silicon films of various thicknesses, prepared at 20 mA current density using a photoluminescence fitting model to determine the average crystallite size of sphe-rical shaped interconnected silicon quantum dots. Discrepancy in photoluminescence behavior of the samples is well explained with this model.
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| Publisher |
Сумський державний університет
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| Date |
2013-06-17T11:52:26Z
2013-06-17T11:52:26Z 2013 |
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| Type |
Article
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| Identifier |
Fateh Singh Gill, Himanshu Gupta, L.P. Purohit, et al., J. Nano- Electron. Phys. 5 No 1, 01019 (2013)
http://essuir.sumdu.edu.ua/handle/123456789/30973 |
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| Language |
en
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