Effect of Implantation Temperature on the Layer Exfoliation of H-implanted Germanium
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of Implantation Temperature on the Layer Exfoliation of H-implanted Germanium
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| Creator |
Dadwal, U.
Kumar, Praveen Singh, R. |
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| Subject |
Implantation
Ge Exfoliation Annealing |
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| Description |
This work describes the influence of implantation temperature on the layer exfoliation of the H-implanted Ge substrate. For the implantation at RT, post-implantation annealing showed large exfoliated regions over the sample surface. Two depths of the exfoliated regions were observed with average values of about 654 and 856 nm from the top of the H-implanted surface. In the H-implanted Ge at 300 °C, exfoliation occurred in the as-implanted state in the form of surface craters. The average depth of these craters was measured to be about 890 nm from the surface. Simulation results showed that the depth of the exfoliated regions was either located near to the damage peak or away from the H-peak depending upon the implantation temperature.
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| Publisher |
Сумський державний університет
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| Date |
2013-06-19T09:54:43Z
2013-06-19T09:54:43Z 2013 |
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| Type |
Article
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| Identifier |
U. Dadwal, Praveen Kumar, R. Singh, J. Nano- Electron. Phys. 5 No 2, 02002 (2013)
http://essuir.sumdu.edu.ua/handle/123456789/30993 |
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| Language |
en
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