Phase Transition Sensitive Schottky Barriers In Ga-Si(P) Contacts
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Phase Transition Sensitive Schottky Barriers In Ga-Si(P) Contacts
|
|
| Creator |
Modi, B.P.
Dhimmar, J.M. Patel, K.D. |
|
| Subject |
Schottky barrier
Phase transition Barrier height Ideality factor |
|
| Description |
Investigation and understanding of Schottky diodes continue to be interesting both for basic as well as technological points of view. Even now the evolutionary aspects of such contacts are not very clearly understood. In this paper it is shown that in respect of interfacial strain contribution to the barrier heights of such contacts semiconductor – liquid metal contacts are relatively better placed than solid semiconductor-solid metal contacts. Results on Ga-Si(p) contact are discussed in this paper to show phase sensitive contribution to the barrier height of such Schottky contacts.
|
|
| Publisher |
Сумський державний університет
|
|
| Date |
2013-06-19T10:48:30Z
2013-06-19T10:48:30Z 2013 |
|
| Type |
Article
|
|
| Identifier |
B.P. Modi, J.M. Dhimmar, K.D. Patel, J. Nano- Electron. Phys. 5 No 2, 02005 (2013)
http://essuir.sumdu.edu.ua/handle/123456789/30999 |
|
| Language |
en
|
|