Pulsed Laser Deposited Nickel Doped Zinc Oxide Thin Films: Structural and Optical Investigations
Electronic Archive of Sumy State University
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Title |
Pulsed Laser Deposited Nickel Doped Zinc Oxide Thin Films: Structural and Optical Investigations
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Creator |
Dar, Tanveer A.
Agrawal, Arpana Sen, Pratima |
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Subject |
Semiconductors
II–VI semiconductors Doping Exchange interactions |
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Description |
Structural and optical studies has been done on Nickel doped Zinc Oxide (NixZn1 – xO, x 0.03, 0.05 and 0.07 by weight) thin films prepared by pulsed laser deposition technique. The films are characterized by X-ray diffraction, Uv-vis spectroscopy, X-ray photoelectron spectroscopy. We observed a slight red shift in the optical band gap in the NiZnO subsequent to Ni doping. This shift can be assigned due to the sp-d exchange interaction of Ni- d states with s and p-states of ZnO. Also X-ray photoelectron spectroscopy studies show that Ni has well substituted in + 2 oxidation state by replacing Zn2+.
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Publisher |
Сумський державний університет
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Date |
2013-06-19T14:42:50Z
2013-06-19T14:42:50Z 2013 |
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Type |
Article
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Identifier |
Tanveer A. Dar, Arpana Agrawal, Pratima Sen, J. Nano- Electron. Phys. 5 No 2, 02024 (2013)
http://essuir.sumdu.edu.ua/handle/123456789/31018 |
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Language |
en
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