Stress Topology within Silicon Single-Crystal Cantilever Beam
Electronic Archive of Sumy State University
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Stress Topology within Silicon Single-Crystal Cantilever Beam
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Creator |
Kuzmenko, A.P.
Timakov, D.I. Abakumov, P.V. Однодворець, Лариса Валентинівна Однодворец, Лариса Валентиновна Odnodvorets, Larysa Valentynivna Dobromyslov, M.B. |
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Subject |
Raman scattering spectroscopy
Silicon single-crystal Flexural stresses Mapping of Raman shift distributions |
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Description |
Qualitative mechanism in line with experimental data on visualization of the domain structure and fine structure of the domain wall in weak ferromagnets has been proposed. The mechanism is based on the phenomenological consideration of Faraday rotation, optical absorption, and atom polarization in response to the radiation exciting Raman scattering. Qualitative agreement of estimates on the scattered radiation intensity in oppositely- magnetized domains with experimental results is good, which made it possible to attack problems of visualization of magnetic entities with nanoscale resolution.
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Publisher |
Сумський державний університет
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Date |
2013-09-12T08:06:35Z
2013-09-12T08:06:35Z 2013 |
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Type |
Article
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Identifier |
A.P. Kuzmenko, D.I. Timakov, P.V. Abakumov, et al., J. Nano- Electron. Phys. 5 No 3, 03024 (2012)
http://essuir.sumdu.edu.ua/handle/123456789/31972 |
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Language |
en
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