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Stress Topology within Silicon Single-Crystal Cantilever Beam

Electronic Archive of Sumy State University

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Title Stress Topology within Silicon Single-Crystal Cantilever Beam
 
Creator Kuzmenko, A.P.
Timakov, D.I.
Abakumov, P.V.
Однодворець, Лариса Валентинівна
Однодворец, Лариса Валентиновна
Odnodvorets, Larysa Valentynivna
Dobromyslov, M.B.
 
Subject Raman scattering spectroscopy
Silicon single-crystal
Flexural stresses
Mapping of Raman shift distributions
 
Description Qualitative mechanism in line with experimental data on visualization of the domain structure and fine structure of the domain wall in weak ferromagnets has been proposed. The mechanism is based on the phenomenological consideration of Faraday rotation, optical absorption, and atom polarization in response to the radiation exciting Raman scattering. Qualitative agreement of estimates on the scattered radiation intensity in oppositely- magnetized domains with experimental results is good, which made it possible to attack problems of visualization of magnetic entities with nanoscale resolution.
 
Publisher Сумський державний університет
 
Date 2013-09-12T08:06:35Z
2013-09-12T08:06:35Z
2013
 
Type Article
 
Identifier A.P. Kuzmenko, D.I. Timakov, P.V. Abakumov, et al., J. Nano- Electron. Phys. 5 No 3, 03024 (2012)
http://essuir.sumdu.edu.ua/handle/123456789/31972
 
Language en