Some Aspects of Phosphorus Diffusion in Germanium in In0,01Ga0,99As / In0,56Ga0,44P / Ge Heterostructures
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Some Aspects of Phosphorus Diffusion in Germanium in In0,01Ga0,99As / In0,56Ga0,44P / Ge Heterostructures
|
|
| Creator |
Kobeleva, S.P.
Anfimov, I.M. Yurchuk, S.Y. Turutin, A.V. |
|
| Subject |
Multi cascade solar cell
Diffussion of P in Ge Diffusion of Ga in Ge Heterostructure |
|
| Description |
The results of experimental and theoretical researches of phosphorus distribution in the first cascade of a multi cascade solar cell based on nanoscale structures AIIIBV / Ge are presented. Secondary ion mass spectroscopy has been applied to obtain profiles of phosphorus and gallium in In0.01Ga0.99As / In0.56Ga0.44P / Ge heterostructure. In the germanium surface there is a thin layer of about 26 nm, in which the gallium concentration exceeds the concentration of phosphorus. Therefore a nanoscale p-n junction forms that does not have a significant impact on the solar cells performance at room temperature. Phosphorus diffusion is much slower in this area than in area with electronic conductivity. The main p-n junction is formed at a distance of 130-150 nm from the surface of the germanium. Diffusivity of gallium (DGa = 1,4×10 – 15 cm2/s) is markedly higher than described in a literature. Diffusivity of P increase from DP = 3×10-15 cm2/s on the boundary of the heterostructure In0, 49Ga0, 51P to DP = 5,2×10 – 14 cm2/s in n-type Ge. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33648 |
|
| Publisher |
Сумський державний університет
|
|
| Date |
2014-01-18T07:41:25Z
2014-01-18T07:41:25Z 2013 |
|
| Type |
Article
|
|
| Identifier |
S.P. Kobeleva, I.M. Anfimov, S.Y. Yurchuk, A.V. Turutin, J. Nano- Electron. Phys. 5 No 4, 04021 (2013)
http://essuir.sumdu.edu.ua/handle/123456789/33648 |
|
| Language |
en
|
|