Diode Based on Amorphous SiC
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Diode Based on Amorphous SiC
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| Creator |
Zakhvalinskii, V.S.
Borisenko, L.V. Aleynikov, A.J. Piljuk, E.A. Goncharov, I. Taran, S.V. |
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| Subject |
Atomic force microscopy
Transmission electron microscope Silicon carbide Thin films |
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| Description |
Diode structure on the basis of amorphous silicon carbide and p-type polycrystalline silicon (Eurosolar) were obtained with magnetron RF-nonreactive sputtering method from solid-phase target in argon atmosphere. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33656 |
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| Publisher |
Сумський державний університет
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| Date |
2014-01-18T08:17:14Z
2014-01-18T08:17:14Z 2013 |
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| Type |
Article
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| Identifier |
V.S. Zakhvalinskii, L.V. Borisenko, A.J. Aleynikov, et al., J. Nano- Electron. Phys. 5 No 4, 04029 (2013)
http://essuir.sumdu.edu.ua/handle/123456789/33656 |
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| Language |
en
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