Features of Ion-Electronic Emission from Surface of Semiconductors
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Features of Ion-Electronic Emission from Surface of Semiconductors
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| Creator |
Kurochka, A.
Sergienko, A. Kurochka, S. Kolybelkin, V. Emelyanov, S.G. Yakushko, E.V. Chervjakov, L.M. |
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| Subject |
Ion-electronic emission
Ion-beam etching Secondary electron current Autoelectronic emission Electron affinity Space charge region |
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| Description |
The results of the research value of the current of the secondary electrons in the ion-beam etching of various semiconductors. Shows the setup and electrical circuit of the experiment. An experimental study to determine the dependence of the current of the secondary electrons from the band gap Eg and the height of the potential barrier (electron affinity) eχ. It is shown that in the conditions of ion-beam etching of the semiconductor is the penetration of the electric field, which leads to a shift of the energy levels of electrons in the surface layer. Found that the ion-electronic signal emission silicon n-type is higher than the p-type silicon. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33663 |
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| Publisher |
Сумський державний університет
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| Date |
2014-01-18T08:58:30Z
2014-01-18T08:58:30Z 2013 |
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| Type |
Article
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| Identifier |
A. Kurochka, A. Sergienko, S. Kurochka, et al., J. Nano- Electron. Phys. 5 No 4, 04036 (2013)
http://essuir.sumdu.edu.ua/handle/123456789/33663 |
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| Language |
en
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