Photoluminescence of high optical quality CdSe thin films deposited by close-spaced vacuum sublimation
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photoluminescence of high optical quality CdSe thin films deposited by close-spaced vacuum sublimation
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| Creator |
Гнатенко, Юрій Павлович
Гнатенко, Юрий Павлович Hnatenko, Yurii Pavlovych Буківський, Петро Миколайович Букивский, Петр Николаевич Bukivskyi, Petro Mykolaiovych Фарина, Іван Олександрович Фарина, Иван Александрович Faryna, Ivan Oleksandrovych Опанасюк, Анатолій Сергійович Опанасюк, Анатолий Сергеевич Opanasiuk, Anatolii Serhiiovych Іващенко, Максим Миколайович Иващенко, Максим Николаевич Ivashchenko, Maksym Mykolaiovych |
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| Subject |
II–VI films
Low-temperature photoluminescence Residual impurity states Point defects Optical quality |
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| Description |
Polycrystalline CdSe thin films (d¼0.1–3.0 μm) have been deposited on a glass substrate by means of the close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained at Тs4473 K have only wurtzite phase. The influence of deposition conditions, in particular, the substrate temperature on the photoluminescence (PL) of CdSe films spectra was investigated. This let us study the effect of glass substrate on their optical quality as well as determine the nature and energy structure of the intrinsic defects and residual impurities in the films. The presence in PL spectrum of the most intense sharp donor bound exciton D0 X-line for CdSe films obtained at Ts¼873 K indicates the n-type conductivity and their high optical quality. Intensive PL bands in the spectral range 1.65–1.74 eV were also observed, which are associated with the recombination of donor–acceptor pairs with the participation of the shallow donor and acceptor centers caused by Na(Li) residual impurities. As a result of the study of the PL spectra of CdSe films the optimal temperature conditions of their growth were determined, namely, the substrate temperature T 873 K and the evaporator temperature T 973 K. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33847 This research has been supported by the Ministry of Education and Science of Ukraine (Grant No. 0110U001151) by the National Academy of Sciences of Ukraine (Grants Nos. BС-157-15 and B-146-15). |
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| Publisher |
ElsevierB.V.
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| Date |
2014-02-03T10:16:37Z
2014-02-03T10:16:37Z 2013-09 |
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| Type |
Article
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| Identifier |
http://essuir.sumdu.edu.ua/handle/123456789/33847
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| Language |
en
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| Relation |
146;
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