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Injection Spectroscopy of Deep Traps in Nanostructured Films of Cadmium Sulfide

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Title Injection Spectroscopy of Deep Traps in Nanostructured Films of Cadmium Sulfide
 
Creator Гринько, Д.О.
Гринько, Д.О.
Grynko, D.O.
Дмитриев, О.П.
Дмитриев, О.П.
Dimitriev, O.P.
Смертенко, П.С.
Смертенко, П.С.
Smertenko, P.S.
Федоряк, O.M.
Федоряк, O.M.
Fedoryak, O.M.
Опанасюк, Анатолій Сергійович
Опанасюк, Анатолий Сергеевич
Opanasiuk, Anatolii Serhiiovych
Тиркусова, Надія Володимирівна
Тыркусова, Надежда Владимировна
Tyrkusova, Nadiia Volodymyrivna
Носков, Ю.В.
Носков, Ю.В.
Noskov, Yu.V.
Огурцов, Н.А.
Огурцов, Н.А.
Ogurtsov, N. A.
Пуд, A.A.
Пуд, A.A.
Pud, A.A.
 
Subject CdS film
Nanostructured layer
Current-voltage characteristic
Differential approach
Injection spectroscopy
Trap
 
Description Nanocrystallin CdS films with controlled stoichiometry deposited by CSVS were investigated by meth-
od of the current-voltage characteristics in ITO/CdS /In structures. It was shown that in the case of cadmi-
um excess (S lecular recombination in the material. In the case of excess sulfur (S>Cd) charge flow mechanism is deter-
mined by monomolecular recombination. In the band gap of CdS with excess of cadmium there was detected localized states with energy Et = 0.514 ± 0.026 eV, while in the material with Excess sulfur there are two localized states with energy Et1 = 0.514 ± 0.026 eV and Et2 = 0.700 ± 0.026 eV. Full concentration of localized states is more than 2·1021 m-3 – 5·1022 m-3. Dependence of injection in parameters and nature of injection in the structures based on nanostructured CdS films on their stoichiometry was determined.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33901
 
Publisher Sumy State University Publishing
 
Date 2014-02-07T08:39:29Z
2014-02-07T08:39:29Z
2013
 
Type Article
 
Identifier Injection Spectroscopy of Deep Traps in Nanostructured Films of Cadmium Sulfide [Текст] / D.O. Grynko, O.P.Dimitriev, P.S. Smertenko, O.M. Fedoryak, А.S. Оpanasyuk, N.V. Тirkusova, Yu.V.Noskov, N. A. Ogurtsov, A.A. Pud // 3rd International Conference “Nanomaterials: Applications & Properties - 2013 (NAP-2013)”. – Alushta, the Crimea, Ukraine, 2013. — С. 01NTF41-1.
http://essuir.sumdu.edu.ua/handle/123456789/33901
 
Language en