Simulation Study on the Open-Circuit Voltage of Amorphous Silicon p-i-n Solar Cells Using AMPS-1D
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Simulation Study on the Open-Circuit Voltage of Amorphous Silicon p-i-n Solar Cells Using AMPS-1D
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| Creator |
Omer, B.M.
Mohammed, F.A. Mahgoub, A. Seed Ahmed |
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| Subject |
AMPS-1D
Modeling Amorphous Silicon solar cell Open-circuit voltage |
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| Description |
AMPS-1D (Analysis of Microelectronic and Photonic Structure) simulation program was used to simulate Amorphous Silicon p-i-n Solar Cell. The simulated result of illuminated current density-voltage characteristics was in a good agreement with experimental values. The dependence of the open-circuit voltage on the characteristics of the a-Si:H intrinsic layer was investigated. The simulation result shows that the open-circuit voltage does not depend on the thickness of the intrinsic layer. The open-circuit voltage decreases when the front contact barrier height is small or the energy gap of the intrinsic layer is small. The open-circuit voltage increases when the distribution of the tail states is sharp or the capture cross sections of these states are small. |
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| Publisher |
Сумський державний університет
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| Date |
2014-04-08T06:16:21Z
2014-04-08T06:16:21Z 2014 |
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| Type |
Article
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| Identifier |
B.M. Omer, F.A. Mohammed, A. Seed Ahmed Mahgoub, J. Nano- Electron. Phys. 6 No 1, 01006 (2014)
http://essuir.sumdu.edu.ua/handle/123456789/34321 |
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| Language |
en
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