Mott–Schottky Analysis of SnO2 Nanoparticles by Impedance Measurements underUltrahigh Pressure
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Mott–Schottky Analysis of SnO2 Nanoparticles by Impedance Measurements underUltrahigh Pressure
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| Creator |
Chenari, H.M.
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| Subject |
SnO2 Nanoparticles
Mott-Schottky Impedance Spectroscopy |
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| Description |
In this study, the SnO2 nanoparticle powders were compacted into a disk shape form of under a ultrahigh pressure up to 49.6 GPa. Complex impedance analysis of nano-SnO2 thick film/electrode system was studied as a function of applied potential. A calculated Mott– Schottky plot for the film is presented. Both flat-band potential and donor concentration were estimated from the space charge capacitance at a definite frequency. The film can be described as an n-type semiconductor with a high concentration of donors. |
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| Publisher |
Sumy State University
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| Date |
2014-05-22T10:44:10Z
2014-05-22T10:44:10Z 2012 |
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| Type |
Article
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| Identifier |
Chenari, H.M.
Mott–Schottky Analysis of SnO2 Nanoparticles by Impedance Measurements underUltrahigh Pressure [Текст] / H.M. Chenari
// Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V.1, No1. - 01PCN13
http://essuir.sumdu.edu.ua/handle/123456789/34827 |
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| Language |
en
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