Properties of GaN Films Obtained by Nitridation of Porous GaP (001)
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Properties of GaN Films Obtained by Nitridation of Porous GaP (001)
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| Creator |
Zbyryn, E.M.
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| Subject |
Nitridation of Porous GaP
Films of Cubic-GaN XPS Spectra |
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| Description |
With the help of nitridation of porous GaP (001) in nitrogen plasma thin films of cubic-GaN were obtained. The conclusion was made that the quality of the GaN films is dependent on the degree of porosity of the GaP substrate. XPS spectra were used to investigate the chemical composition of porous GaP substrates, obtained by electrochemical etching. From XPS measurement we determined that the annealing in atomic nitrogen leads to the formation of GaN films. X-ray diffraction measurements show that cubic GaN on porous GaP substrate has no tensile strain |
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| Publisher |
Sumy State University
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| Date |
2014-05-23T07:42:17Z
2014-05-23T07:42:17Z 2012 |
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| Type |
Article
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| Identifier |
Zburyn, E. M.
Properties of GaN Films Obtained by Nitridation of Porous GaP (001) / E. M. Zburyn
// Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No2. - 02NFC16-02NFC16
http://essuir.sumdu.edu.ua/handle/123456789/34882 |
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| Language |
en
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