Raman and Photoluminescence Study of ZnO Films Grown by Chemical Method
Electronic Archive of Sumy State University
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Raman and Photoluminescence Study of ZnO Films Grown by Chemical Method
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Creator |
Avramenko, K.A.
Romanyuk, A.S. Roshina, N.N. Strelchuk, V.V. Kolomys, O.F. Zavyalova, L.V. Svechnikov, S.V. Snopok, B.A. |
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Subject |
ZnO film
Raman spectroscopy Photoluminescence MBE |
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Description |
In this paper phonon and emission properties of ZnO films grown by metalorganic chemical vapour deposition (MOCVD) at ambient pressure and by molecular beam epitaxy (MBE) are investigated using Raman and photoluminescence (PL) spectroscopy. It is shown that high-frequency shift of non-polar phonon modes corresponds to elastic compressive strain in the plane parallel to c-axis and is equal to 3.2×10−3 and 2.2×10−3 for ZnO film grown by MOCVD and MBE, respectively. The possibility of obtaining highquality ZnO films grown by MOCVD was demonstrated. |
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Publisher |
Sumy State University
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Date |
2014-05-26T11:32:16Z
2014-05-26T11:32:16Z 2012 |
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Type |
Article
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Identifier |
Raman and Photoluminescence Study of ZnO Films Grown by Chemical Method / K. A. Avramenko, À. S. Romanyuk, N. N. Roshina et al.
// Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No3. - 03TF12
http://essuir.sumdu.edu.ua/handle/123456789/35010 |
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Language |
en
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