Electrical Properties of High-k Oxide in Pd/Al2O3/InGaAs Stack
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electrical Properties of High-k Oxide in Pd/Al2O3/InGaAs Stack
|
|
| Creator |
Gomeniuk, Yu.Y.
Nazarov, A.N. Monaghan, S. Cherkaoui, K. O’Connor, E. Povey, I. Djara, V. Hurley, P.K. |
|
| Subject |
High-k oxide
InGaAs MOS structure MOSFET C-V ALD Interface states |
|
| Description |
The paper presents the results of capacitance-voltage (C-V) characterization of metal-oxidesemiconductor (MOS) structure, namely Pd/Al2O3/ In0.53Ga0.47As/InP. It is shown that MOS structure under study exhibit both electron and hole trapping with permanent and temporary charge trapping contributions. The interfacial transition layer between the high-k oxide and InGaAs has the greatest influence on this charge trapping phenomenon. |
|
| Publisher |
Sumy State University
|
|
| Date |
2014-05-27T05:36:27Z
2014-05-27T05:36:27Z 2012 |
|
| Type |
Article
|
|
| Identifier |
Electrical Properties of High-k Oxide in Pd/Al2O3/InGaAs Stack / Y. Y. Gomeniuk, A. N. Nazarov, S. Monaghan et al.
// Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V.1, No3. - 03TF16
http://essuir.sumdu.edu.ua/handle/123456789/35048 |
|
| Language |
en
|
|