Spectral Response of Indium Oxynitride Thin Films
Electronic Archive of Sumy State University
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Title |
Spectral Response of Indium Oxynitride Thin Films
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Creator |
Sparvoli, M.
Onmori, R.K. Chubaci, J.F.D. |
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Subject |
Thin films
Indium oxynitride |
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Description |
In this work we study the electrical properties as spectral response, resistivity and quantum efficiency of nanostructured indium oxynitride deposited by reactive RF magnetron sputtering. This material shows multi-functionality in electrical and photonic applications. It shows transparency in visible range, wide band gap, high resistivity, low linkage current and response for light. The deposition processes were performed in a home build magnetron sputtering system, using a four-inch pure In (99.999 %) target, nitrogen and oxygen as process gases. The pressure was kept constant in 1.33 Pa and the RF power (13.56 MHz) was constant 250 W. The spectral response was estimated for samples deposited with 0 %, 10 %, 20 %, 50 %, 80 % and 85 % of oxygen concentration in the gas mixture. |
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Publisher |
Sumy State University
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Date |
2014-05-27T06:32:01Z
2014-05-27T06:32:01Z 2013 |
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Type |
Article
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Identifier |
Sparvoli, M. Spectral Response of Indium Oxynitride Thin Films [Текст] / M. Sparvoli, R.K. Onmori, J.F. Chubaci // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01NTF05
http://essuir.sumdu.edu.ua/handle/123456789/35081 |
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Language |
en
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