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Spectral Response of Indium Oxynitride Thin Films

Electronic Archive of Sumy State University

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Title Spectral Response of Indium Oxynitride Thin Films
 
Creator Sparvoli, M.
Onmori, R.K.
Chubaci, J.F.D.
 
Subject Thin films
Indium oxynitride
 
Description In this work we study the electrical properties as spectral response, resistivity and quantum efficiency
of nanostructured indium oxynitride deposited by reactive RF magnetron sputtering. This material shows
multi-functionality in electrical and photonic applications. It shows transparency in visible range, wide
band gap, high resistivity, low linkage current and response for light. The deposition processes were performed
in a home build magnetron sputtering system, using a four-inch pure In (99.999 %) target, nitrogen
and oxygen as process gases. The pressure was kept constant in 1.33 Pa and the RF power (13.56 MHz)
was constant 250 W. The spectral response was estimated for samples deposited with 0 %, 10 %, 20 %,
50 %, 80 % and 85 % of oxygen concentration in the gas mixture.
 
Publisher Sumy State University
 
Date 2014-05-27T06:32:01Z
2014-05-27T06:32:01Z
2013
 
Type Article
 
Identifier Sparvoli, M. Spectral Response of Indium Oxynitride Thin Films [Текст] / M. Sparvoli, R.K. Onmori, J.F. Chubaci // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01NTF05
http://essuir.sumdu.edu.ua/handle/123456789/35081
 
Language en