Electrical Properties of Al/p-Si Structures with Colchicine Organic Thin Film
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electrical Properties of Al/p-Si Structures with Colchicine Organic Thin Film
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| Creator |
Gullu, O.
Ruzgar, S. Asubay, S. Ozerden, E. Kilicoglu, T. Turut, A. |
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| Subject |
Electronic Materials
Organic Films Barrier Height Ideality Factor Surfaces Interfaces |
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| Description |
In this study, we have fabricated an Al/Colchicine/p-Si structure and have investigated its current– voltage (I–V) and capacitance–voltage (C–V) characteristics at room temperature. The barrier height and ideality factor values of 0.68 eV and 3.22, respectively, have been obtained from the I-V plot. The value of the barrier height was compared with the barrier height value of 0.50 eV of a conventional Al/p-Si diode. This was attributed to the Colchicine organic film modifying the effective barrier height by affecting the space charge region of the inorganic Si semiconductor substrate. By using C – 2-V characteristics the diffusion potential value has been extracted as 1.32 V. |
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| Publisher |
Sumy State University
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| Date |
2014-05-27T10:47:42Z
2014-05-27T10:47:42Z 2012 |
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| Type |
Article
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| Identifier |
Electrical Properties of Al/p-Si Structures with Colchicine Organic Thin Film ] / O. Gullu, S. Ruzgar, S. Asubay et al.
// Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No3. - 03PCSI05
http://essuir.sumdu.edu.ua/handle/123456789/35140 |
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| Language |
en
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