The Comparative Investigations of Structural and Optical Properties of GaSb nanocrystals / Si layers
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The Comparative Investigations of Structural and Optical Properties of GaSb nanocrystals / Si layers
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| Creator |
Greben, M.V.
Komarov, F.F. L.A. Vlasukova1 Milchanin, O.V. Mudryi, A.V. Parkhomenko, I.N. |
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| Subject |
Crystalline silicon
GaSb nanocrystals High-fluence implantation Broad band emission |
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| Description |
Optical and structural properties of GaSb nanocrystals fabricated by co-implantation of Ga and Sb ions in single crystalline Si (100), followed by thermal treatment are investigated. In the first group of samples named Si / GaSb the implantation of Ga ions was followed by Sb implantation, whereas in the second group of samples named Si / SbGa with increased by factor 1.4 ion fluence the order of implantation was inverted. The presence of nanocrystals in both kinds of samples was proved by TEM and RS experiments. Low-temperature PL measurements show a PL broad band in the region at 0.75-1.1 eV for Si / SbGa samples annealed at 900 °C. No PL was observed in the Si/SbGa samples after annealing at 1100 °C. |
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| Publisher |
Sumy State University
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| Date |
2014-05-27T11:02:25Z
2014-05-27T11:02:25Z 2013 |
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| Type |
Article
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| Identifier |
The Comparative Investigations of Structural and Optical Properties of GaSb nanocrystals / Si layers [Текст] / M.V. Greben, F.F. Komarov, L.A. Vlasukova et al.
// Nanomaterials: Applications & Properties (NAP-2013) : 3-rd International conference, Alushta, the Crimea, Ukraine, September 16-21, 2013 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No2. - 02PCN16
http://essuir.sumdu.edu.ua/handle/123456789/35169 |
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| Language |
en
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