Laser Raman-Spectroscopy of Phase Transformation in the Near Surface of GaP
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Laser Raman-Spectroscopy of Phase Transformation in the Near Surface of GaP
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| Creator |
Gotoshia, S.V.
Gotoshia, L.V. |
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| Subject |
Raman Scattering
Implantation Amorphization Microcrystalline Nanocrystalline Semiconductors |
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| Description |
When implanting GaP with boron and heavier argon ions, severe distortion of crystal structure occurs. Raman scattering has shown that with implanted ion dose change the crystal structure transforms gradually into disordered state, in which coexisting of crystalline, microcrystalline, nanocrystalline and amorphous phases is possible. At the certain stage of implantation the formation of continuous amorphous layer of GaP takes place. The critical doses of amorphization of GaP at implantation with B and Ar ions have been defined. The graph of dependence of LO phonon halfwidths upon implantation doses is also a characteristic of synthesizing of nano-GaP. We suggest a possible mechanism for structural transition dynamics in GaP caused by ion implantation. |
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| Publisher |
Sumy State University
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| Date |
2014-05-27T10:59:40Z
2014-05-27T10:59:40Z 2012 |
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| Type |
Article
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| Identifier |
Gotoshia, S. V.
Laser Raman-Spectroscopy of Phase Transformation in the Near Surface of GaP / S. V. Gotoshia, L. V. Gotoshia
// Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No3. - 03PCSI10
http://essuir.sumdu.edu.ua/handle/123456789/35159 |
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| Language |
en
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