Oxygen Behavior Around Heavily Doped Ultra-Shallow Junction in Si
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Oxygen Behavior Around Heavily Doped Ultra-Shallow Junction in Si
|
|
| Creator |
Oberemok, O.S.
Gudymenko, O.Yo. Lytovchenko, V.G. Melnyuk, V.P. |
|
| Subject |
ion implantation
interface arsenic junction diffusion gettering oxygen |
|
| Description |
The diffusion and gettering of oxygen are investigated after low-energy arsenic implantation and furnace annealing of SiO2/Si structures. Secondary ion mass spectrometry was used for examination of arsenic and oxygen depth profiles. It is shown that arsenic-doped ultra-shallow junction in Si stimulates the background oxygen gettering by SiO2/Si interface at the annealing temperatures higher than 850 C. |
|
| Publisher |
Sumy State University
|
|
| Date |
2014-05-27T11:01:34Z
2014-05-27T11:01:34Z 2012 |
|
| Type |
Article
|
|
| Identifier |
Oxygen Behavior Around Heavily Doped Ultra-Shallow Junction in Si / O. S. Oberemok, O. Y. Gudymenko, V. G. Lytovchenko, V. P. Melnyuk
// Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No3. - 03PCSI13
http://essuir.sumdu.edu.ua/handle/123456789/35166 |
|
| Language |
en
|
|