Depth Profiling of Multilayer Mo/Si Nanostructures
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Depth Profiling of Multilayer Mo/Si Nanostructures
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| Creator |
Tolstoguzov, A.
Ber, B. Chapon, P. Drozdov, M.N. |
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| Subject |
Sputter Depth Profiling
Glow Discharge Optical Emission Spectroscopy (GDOES) Mo/Si In-terferential Mirror Round-robin Characterization, Secondary Ion Mass Spectrometry (SIMS) |
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| Description |
A round-robin characterization is reported on the sputter depth profiling of [60(3.0 nm Mo/ 0.3 nm B4C/ 3.7 nm Si)] and [60 (3.5 nm Mo/ 3.5 nm Si)] stacks deposited on Si (111). Two different commercial secondary ion mass spectrometers with time-of-flight and magnetic-sector analyzers and a pulsed radio frequency glow discharge optical emission spectrometer were used. The pros and cons of each instrumental approach are discussed.
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| Publisher |
Sumy State University
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| Date |
2014-05-28T08:12:48Z
2014-05-28T08:12:48Z 2013 |
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| Type |
Article
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| Identifier |
Depth Profiling of Multilayer Mo/Si Nanostructures [Текст] / A. Tolstoguzov, B. Ber, P. Chapon, M. N. Drozdov
// Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01PCSI08
http://essuir.sumdu.edu.ua/handle/123456789/35262 |
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| Language |
en
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