Dressed Photon-phonon Technology for Ultra Flat Surface
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Dressed Photon-phonon Technology for Ultra Flat Surface
|
|
| Creator |
Yatsui, T.
Ohtsu, M. |
|
| Subject |
Dressed-photon method
Phonon etching method Surface roughness |
|
| Description |
A reduction of the surface roughness, Ra, is required in various applications including electronic devic-es and / or optical devices. Although chemical-mechanical polishing (CMP) has been used to flatten the sur-faces, it is generally limited to reducing Ra to about 2 Å because the polishing pad roughness is as large as 10 m, and the polishing-particle diameters in the slurry are as large as 100 nm. We therefore developed a new polishing method, dressed-photon and phonon etching (DPP etching), that uses dressed photon based on an autonomous phonon-assisted process. DPP etching does not use any polishing pad, with which we obtained ultra-flat silica surface with angstrom-scale average roughness as small as Ra of 0.1 nm. Addi-tionally, we succeeded in reduction of the Ra for the three-dimensional structures.
|
|
| Publisher |
Sumy State University
|
|
| Date |
2014-05-28T08:13:11Z
2014-05-28T08:13:11Z 2013 |
|
| Type |
Article
|
|
| Identifier |
Yatsui, T.
Dressed Photon-phonon Technology for Ultra Flat Surface [Текст] / T. Yatsui, M. Ohtsu
// Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01PCSI09
http://essuir.sumdu.edu.ua/handle/123456789/35264 |
|
| Language |
en
|
|