Mechanism of Oxygen Redistribution During Ultra-shallow Junction Formation in Silicon
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Mechanism of Oxygen Redistribution During Ultra-shallow Junction Formation in Silicon
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| Creator |
Oberemok, O.S.
Gamov, D.V. Litovchenko, V.G. Romanyuk, B.M. Melnik, V.P. Klad’ko, V.P. Popov, V.G. Gudymenko, O.Yo. |
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| Subject |
Ion implantation
Interface Arsenic Oxygen Junction Diffusion Gettering SiO2 SIMS XDS |
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| Description |
The transport of dissolved oxygen in the Czochralski silicon towards the arsenic-doped ultra-shallow junction was investigated. Ultra-shallow junction was formed by low-energy As+ ion implantation with the subsequent furnace annealing at 750 C-950 C temperatures for the dopant activation. Oxygen and arse-nic redistributions were investigated by secondary ion mass spectrometry (SIMS) technique. The peculiari-ties of defect creation and transformation were studied by the X-ray diffuse scattering technique (XDS). It was found that oxygen concentration in the arsenic redistribution region is increased a few times already after 1 minute of annealing. Increase of annealing time leads to decrease of oxygen accumulation as a re-sult of oxygen transportation to the SiO2/Si interface. As a result the thickness of screen silicon oxide is in-creased by 0.5 nm. This effect is related with the oxygen gettering from the wafer bulk. A physical mecha-nism of the oxygen transfer is discussed.
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| Publisher |
Sumy State University
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| Date |
2014-05-28T08:16:24Z
2014-05-28T08:16:24Z 2013 |
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| Type |
Article
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| Identifier |
Mechanism of Oxygen Redistribution During Ultra-shallow Junction Formation in Silicon [Текст] / O.S. Oberemok, D.V. Gamov, V.G. Litovchenko et al.
// Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01PCSI14
http://essuir.sumdu.edu.ua/handle/123456789/35276 |
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| Language |
en
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