Effect of Added Nitrogen on Properties of SiCN Films Prepared by PECVD Using Hexamethyldisilazane
Electronic Archive of Sumy State University
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Title |
Effect of Added Nitrogen on Properties of SiCN Films Prepared by PECVD Using Hexamethyldisilazane
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Creator |
Porada, O.K.
Kozak, A.O. Ivashchenko, L.A. Ivashchenko, V.I. Tomila, T.V. |
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Subject |
PECVD
Hexamethyldisilazane SiCN films FTIR Nanoindentation |
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Description |
Silicon carbonitride thin films were obtained by plasma-enhanced chemical vapor deposition using native precursor hexamethyldisilazane with a nitrogen addition. Films were investigated by X-ray diffraction spectroscopy, Fourier transform infrared spectroscopy and nanoindentation. It is established that all the films were X-ray amorphous. An increase in nitrogen flow rate leads to increasing the number of Si-N bonds, which, in turn, promotes the rise of nanohardness and elastic modulus up to 20 GPa and 160 GPa, respectively. The optimum deposition parameters were established. The films can be recommended as hard coatings for strengthening cutting tools. |
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Publisher |
Sumy State University
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Date |
2014-05-28T11:21:02Z
2014-05-28T11:21:02Z 2013 |
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Type |
Article
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Identifier |
Effect of Added Nitrogen on Properties of SiCN Films Prepared by PECVD Using Hexamethyldisilazane [Текст] / O.K. Porada, A.O. Kozak, L.A. Ivashchenko et al.
// Nanomaterials: Applications & Properties (NAP-2013) : 3-rd International conference, Alushta, the Crimea, Ukraine, September 16-21, 2013 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No2. - 02FNC11
http://essuir.sumdu.edu.ua/handle/123456789/35320 |
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Language |
en
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