Запис Детальніше

Effect of Film Thickness and Annealing on the Structural and Optical Properties of CuInAlSe2 Thin Films

Electronic Archive of Sumy State University

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Поле Співвідношення
 
Title Effect of Film Thickness and Annealing on the Structural and Optical Properties of CuInAlSe2 Thin Films
 
Creator Parihar, U.
Padha, N.
Ray, J.R.
Desai, M.S.
Panchal, C.J.
Mehta, P.K.
Чешко, Ірина Володимирівна
Чешко, Ирина Владимировна
Cheshko, Iryna Volodymyrivna
Проценко, Іван Юхимович
Проценко, Иван Ефимович
Protsenko, Ivan Yukhymovych
 
Subject Film system
CuInAlSe2
Optical properties
Scanning electron microscopy
Hall Effect
 
Description CuIn1 – xAlxSe2 (CIAS) thin films were grown using flash evaporation method by varying the film
thickness from 500 nm to 700 nm. Prepared CIAS thin films were annealed at 573 K for one hour in
vacuum. The influence of film’s thickness and the annealing temperature were characterized by the X-ray
diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive analysis of X-ray (EDAX),
Optical transmission measurements, and Hall Effect measurement. As the film thickness increases the
crystallinity improves and due to that the optical absorption also improves. The further improvement for
different thicknesses of CIAS thin films were observed by annealing. The thicker (700 nm) and annealed
CIAS thin film shows the crystallite size of 24.3 nm, energy band gap of 1.19 eV, and resistivity of about
9  102 Ω cm.
 
Publisher Sumy State University
 
Date 2014-05-28T11:21:13Z
2014-05-28T11:21:13Z
2013
 
Type Article
 
Identifier Effect of Film Thickness and Annealing on the Structural and Optical Properties of CuInAlSe2 Thin Films of CuInAlSe2 Thin Films [Текст] / U. Parihar, N. Padha, J.R. Ray et al. // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01PCSI29
http://essuir.sumdu.edu.ua/handle/123456789/35321
 
Language en