Ferromagnetism and Electronic Structure of (Ga,Mn)As:Bi and (Ga,Mn)As Epitaxial Layers
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Ferromagnetism and Electronic Structure of (Ga,Mn)As:Bi and (Ga,Mn)As Epitaxial Layers
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| Creator |
Yastrubchak, O.
Sadowski, J. Andrearczyk, T. Domagała, J. Z. Gluba, Ł. Rawski, M. Żuk, J. Wosinski, T. |
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| Subject |
(Ga,Mn)As:Bi
(Ga,Mn)As Diluted ferromagnetic semiconductor Photoreflectance (PR) spec-troscopy Fermi level Band-structure |
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| Description |
The photoreflectance (PR) spectroscopy was applied to study the band-structure in GaAs:Bi, (Ga,Mn)As and (Ga,Mn)As:Bi layers with the 4% of Mn and 1 % of Bi content and, as a reference, undoped GaAs layer. All films were grown by low temperature (LT) MBE on semi-insulating (001) GaAs substrates. Photoreflec-tance studies were supported by Raman spectroscopy and high resolution X-ray diffractometry (XRD) measurements. Magnetic properties of the films were characterized with a superconducting quantum in-terference device (SQUID) magnetometer. Our findings were interpreted in terms of the model, which as-sumes that the mobile holes residing in the valence band of GaAs and the Fermi level position determined by the concentration of valence-band holes.
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| Publisher |
Sumy State University
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| Date |
2014-05-29T06:01:29Z
2014-05-29T06:01:29Z 2013 |
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| Type |
Article
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| Identifier |
Ferromagnetism and Electronic Structure of (Ga,Mn)As:Bi and (Ga,Mn)As Epitaxial Layers [Текст] / O. Yastrubchak, J. Sadowski, T. Andrearczyk et al.
// Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01NFPMM01
http://essuir.sumdu.edu.ua/handle/123456789/35332 |
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| Language |
en
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