Influence of Impact Ionization Process on Current-Voltage Characteristics of Nanoscale Silicon n-Channel MOSFET
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of Impact Ionization Process on Current-Voltage Characteristics of Nanoscale Silicon n-Channel MOSFET
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| Creator |
Borzdov, A.V.
Borzdov, V.M. Pozdnyakov, D.V. Komarov, F.F. |
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| Subject |
Silicon MOSFET
Monte Carlo simulation Impact ionization |
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| Description |
The current-voltage characteristics of nanoscale silicon n-channel MOSFET with 50 nm channel length are calculated in the present study. Both the electron and hole transport are simulated by means of the en-semble Monte Carlo method. The importance of electron impact ionization process in the transistor chan-nel for drain biases higher than 1 V is shown.
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| Publisher |
Sumy State University
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| Date |
2014-05-29T07:21:23Z
2014-05-29T07:21:23Z 2013 |
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| Type |
Article
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| Identifier |
Influence of Impact Ionization Process on Current-Voltage Characteristics of Nanoscale Silicon n-Channel MOSFET [Текст] / A.V. Borzdov, V.M. Borzdov, D.V. Pozdnyakov, F.F. Komarov
// Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No4. - 04NAESP10
http://essuir.sumdu.edu.ua/handle/123456789/35371 |
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| Language |
en
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