MOCVD Growths of the InAs QD Structures for Mid-IR Emissions
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
MOCVD Growths of the InAs QD Structures for Mid-IR Emissions
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| Creator |
Xiaohong, Tang
Zongyou, Yin |
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| Subject |
MOCVD
Quantum dot InAs Mid-infrared |
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| Description |
In this research, InAs quantum dot structures for mid-infrared emission were self-assembled on InP substrate by using metal-organic chemical vapor deposition. To improve the grown quantum dot’s shape, the dot density and the dot size uniformity, a two-step growth method has been used and investigated. By changing the composition of the InxGa1 – xAs matrix layer of the InAs / InxGa1 – xAs / InP quantum dot structure, emission wavelength of the InAs quantum dot structure has been extended to the longest 2.35 m measured at 77 K. |
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| Publisher |
Sumy State University
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| Date |
2014-05-29T07:46:29Z
2014-05-29T07:46:29Z 2013 |
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| Type |
Article
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| Identifier |
Xiaohong, Tang
MOCVD Growths of the InAs QD Structures for Mid-IR Emissions [Текст] / T. Xiaohong, Y. Zongyou
// Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No4. - 04NAESP13
http://essuir.sumdu.edu.ua/handle/123456789/35383 |
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| Language |
en
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