Retention Behaviour of MNOS Memory Devices with Embedded Si or Ge Nanocrystals – Computer Simulation
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Retention Behaviour of MNOS Memory Devices with Embedded Si or Ge Nanocrystals – Computer Simulation
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| Creator |
Molnár, K.Z.
Turmezei, P. Horváth, Zs.J. Kovács, B. |
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| Subject |
Non-volatile memory
MNOS Tunneling Retention |
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| Description |
The charge retention behaviour of MNOS structures with embedded Si or Ge nanocrystals are studied by computer simulation. It is obtained that the oxide thickness and the location of nanocrystlas affect the retention behaviour very strongly. The retention time changes from a few ms to several years.
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| Publisher |
Sumy State University
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| Date |
2014-05-29T07:46:57Z
2014-05-29T07:46:57Z 2013 |
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| Type |
Article
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| Identifier |
Retention Behaviour of MNOS Memory Devices with Embedded Si or Ge Nanocrystals – Computer Simulation [Текст] / K.Z. Molna'r, P. Turmezei, Z.J. Horva'th et al.
// Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No4. - 04NAESP14
http://essuir.sumdu.edu.ua/handle/123456789/35385 |
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| Language |
en
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