Correlation between Crystallographic Alignment of Self-induced GaN Nanowires and Features of Si(111) Nitridation
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Correlation between Crystallographic Alignment of Self-induced GaN Nanowires and Features of Si(111) Nitridation
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| Creator |
Kuchuk, A.
Kladko, V. Lytvyn, P. Stanchu, H. Sobancka, M. Wierzbicka, A. Klosek, K. Zytkiewicz, Z.R. |
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| Subject |
GaN
Nanowires Si (111) Crystallographic alignment Nitridation |
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| Description |
Formation and spatial ordering of self-induced GaN nanowires grown by molecular beam epitaxy on a spatially pre-nitridazed Si(111) substrate have been studied. It was found the close correlation between Si substrate nitridation parameters and crystallographic alignment of NWs. Conditions for NWs nucleation and in- plane orientation are predefined by a structural anisotropy of silicon nitride nanolayer. Mechanism of NWs orderly emergence suggested.
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| Publisher |
Sumy State University
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| Date |
2014-05-29T09:43:34Z
2014-05-29T09:43:34Z 2013 |
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| Type |
Article
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| Identifier |
Correlation between Crystallographic Alignment of Self-induced GaN Nanowires and Features of Si(111) Nitridation [Текст] / A. Kuchuk, V. Kladko, P. Lytvyn et al.
// Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No4. - 04NAESP21
http://essuir.sumdu.edu.ua/handle/123456789/35402 |
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| Language |
en
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