Comparison of Atomic Level Simulation Studies of MOSFETs Containing Silica and Lantana Nanooxide Layers
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Comparison of Atomic Level Simulation Studies of MOSFETs Containing Silica and Lantana Nanooxide Layers
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| Creator |
Bikshalu, K.
Manasa, M.V. Reddy, V.S.K. Reddy, P.C.S. Venkateswara Rao, K. |
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| Subject |
MOSFET
Nano oxide layer Quantum mechanical tunneling Transmission spectra I-V characteristics Channel conductance |
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| Description |
The intense downscaling of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) to nano range for improving the device performance requires a high-k dielectric material instead of conventional silica (SiO2) as to avoid Quantum Mechanical Tunneling towards the gate terminal which leads to unnecessary gate current. Out of all the rare earth oxide materials, since lanthana (La2O3) has significantly high dielectric constant (k) and bandgap, we’ve chosen it as oxide layer for one of the MOSFETs. In this work, we simulated two MOSFETs – one with nano SiO2 oxide layer and other with nano La2O3 oxide layer in the atomic level to analyze and compare the transmission spectra, I-V characteristics and Channel conductance of both the MOSFETs.
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| Publisher |
Sumy State University
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| Date |
2014-06-02T10:34:57Z
2014-06-02T10:34:57Z 2013 |
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| Type |
Article
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| Identifier |
Comparison of Atomic Level Simulation Studies of MOSFETs Containing Silica and Lantana Nanooxide Layers [Текст] / K. Bikshalu, M. V. Manasa, V. S. Reddy et al.
// Журнал нано- та електронної фізики. - 2013. - Т.5, №4, Ч.ІІ. - 04058.
http://essuir.sumdu.edu.ua/handle/123456789/35551 |
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| Language |
en
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