Chemical Vapor Deposition of Graphene on Copper
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Chemical Vapor Deposition of Graphene on Copper
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| Creator |
Kostogrud, I.A.
Smovzh, D.V. |
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| Subject |
Synthesis of Graphene
Raman Spectroscopy Chemical Vapor Deposition |
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| Description |
There are several methods for obtaining graphene. They could be divided into three main groups: me-chanical exfoliation, wet chemical methods, chemical vapor deposition (CVD). In this work CVD method was used for synthesis of graphene. The aim of the work was to obtain samples of graphene and to deter-mine the influence of the synthesis parameters. Synthesis of graphene was carried out in thermal reactor under ambient pressure. Methane was used as a precursor gas. Copper foil was used as a substrate. Exper-iments were carried out at different temperatures (970-1010 °С), varying consists of gas mixtures (Ar/He+H2+CH4), different exposition times (5-30 min) and different rates of samples cooling. Synthesized films were analyzed by Raman-spectroscopy method. In our experiments were obtained samples of few-layered graphene. It showed that the parameters of cooling significantly affect the properties of films.
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| Publisher |
Sumy State University
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| Date |
2014-06-04T10:02:50Z
2014-06-04T10:02:50Z 2013 |
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| Type |
Article
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| Identifier |
Kostogrud, I.A. Chemical Vapor Deposition of Graphene on Copper [Текст] / I.A. Kostogrud, D.V. Smovzh // Nanomaterials: Applications & Properties (NAP-2013): 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy: Sumy State University, 2013. - V.2, No3. - 03NCNN46
http://essuir.sumdu.edu.ua/handle/123456789/35637 |
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| Language |
en
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