Evaluation of Vertical Coherence Length, Twist and Microstrain of GaAs / Si Epilayers Using Modified Williamson-Hall Analysis
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Evaluation of Vertical Coherence Length, Twist and Microstrain of GaAs / Si Epilayers Using Modified Williamson-Hall Analysis
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| Creator |
Ravi Kumar
Tapas Ganguli Vijay Chouhan Dixit, V.K. Puspen Mondal Srivastava, A.K. Mukherjee, C. Sharma, T.K. |
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| Subject |
HRXRD
GaAs / Si Anti Phase domain Microstructure Williamson-Hall analysis |
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| Description |
Modified Williamson-Hall (WH) analysis is used to determine the reliable values of the microstructures for Zincblende epilayers grown on non-polar substrates. Systematic high resolution X-ray diffraction (HRXRD) experiments are performed for several skew symmetric reflections which enable an accurate measurement of the values of vertical coherence length (VCL) and microstrain of GaAs epilayers grown on Si. Furthermore, a simple method based on the orientation of Burgers vector is proposed for estimating the ratio of tilt and twist. In this method, the twist can be found easily once tilt is known. It is rather quick and the measured values of twist are very similar to those which are otherwise estimated by acquiring numerous HRXRD scans along with tedious fitting procedures. Presence of 60 mixed dislocations is confirmed from the cross sectional high resolution transmission electron microscope images of GaAs / Si samples. Furthermore, the estimated value of VCL is equivalent to the layer thickness measured by the surface profiler. |
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| Publisher |
Sumy State University
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| Date |
2014-07-25T11:14:12Z
2014-07-25T11:14:12Z 2014 |
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| Type |
Article
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| Identifier |
Ravi Kumar, Tapas Ganguli, Vijay Chouhan, et al., J. Nano- Electron. Phys. 6 No 2, 02010 (2014)
http://essuir.sumdu.edu.ua/handle/123456789/35988 |
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| Language |
en
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