Impurity Influence on Nitride LEDs
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Impurity Influence on Nitride LEDs
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| Creator |
Rabinovich, O.I.
Legotin, S.A. Didenko, S.I. |
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| Subject |
Light emitting diode
AlGaInN Simulation Quantum efficiency |
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| Description |
Light emitting diodes (LEDs) are widely used nowadays. They are used in major parts of our life. But it is still necessary to improve their characteristics. In this paper the impurity and Indium atoms influence on the LEDs characteristics is investigated by computer simulation. Simulation was carried out in Sim Windows. The program was improved for this purpose by creating new files for AlGaInN heterostructure and devices including more than 25 basic parameters. It was found that characteristics depend on impurity and indium atoms changes a lot. The optimum impurity concentration for doping barriers between quan-tum wells was achieved. By varying impurity and Indium concentration the distribution in AlGaInN het-erostructure LEDs characteristics could be improved. |
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| Publisher |
Sumy State University
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| Date |
2014-07-29T07:53:45Z
2014-07-29T07:53:45Z 2014 |
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| Type |
Article
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| Identifier |
O.I. Rabinovich, S.A. Legotin, S.I. Didenko, J. Nano- Electron. Phys. 6 No 3, 03002 (2014)
http://essuir.sumdu.edu.ua/handle/123456789/36102 |
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| Language |
en
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