Gallium Arsenide Czokhralski Crystal Growth with High Oscillatory Influences
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Gallium Arsenide Czokhralski Crystal Growth with High Oscillatory Influences
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| Creator |
Kosushkin, V.G.
Kozhitov, S.L. Emelyanov, S.G. Parkhomenko, Yu.N. Kozhitov, L.V. |
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| Subject |
Crystal growth
Ultrasonic vibration Homogeneity |
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| Description |
The influence of ultrasound introduced into the melt during the growth of single crystals of gallium ar-senide. Ultrasonic vibrations had a frequency of 820 kHz and amplitude of 0.1-0.2 micrometer. Found an increase in the homogeneity of impurity distribution of the bands growth without change of the dislocation structure of single crystals. In the simulation result of the ultrasonic wave interaction with the melt in the crucible on the basis of the theory of formation of phases is established that nucleation rate associated with the frequency and amplitude of the ultrasonic vibration acting on the melt. |
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| Publisher |
Sumy State University
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| Date |
2014-07-31T08:30:50Z
2014-07-31T08:30:50Z 2014 |
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| Type |
Article
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| Identifier |
V.G. Kosushkin, S.L. Kozhitov, S.G. Emelyanov, et al., J. Nano- Electron. Phys. 6 No 3, 03043 (2014)
http://essuir.sumdu.edu.ua/handle/123456789/36329 |
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| Language |
en
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