Control of the Parameters of GaAs:Si p-n Structures by Gyrotron Irradiation
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Control of the Parameters of GaAs:Si p-n Structures by Gyrotron Irradiation
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| Creator |
Sukach, G.A
Kidalov, V.V. |
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| Subject |
gyrotron irradiation
гіротрон опромінення гиротрон облучения light-emitting structures світловипромінюючі структури светоизлучающие структуры thermoelastic stresses термопружна напруга термоупругое напряжение |
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| Description |
It is shown that using gyrotron irradiation it is possible to control the p-n junction in an already fabricated light-emitting structure. Shift of the compensated region of emitting structure based on GaAs:Si is conditioned by the motion of impurities in the field of thermoelastic stresses appearing during cooling of the samples after gyrotron irradiation. |
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| Publisher |
Sumy State University
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| Date |
2014-07-22T09:13:31Z
2014-07-22T09:13:31Z 2011 |
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| Type |
Article
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| Identifier |
Sukach, G.A. Control of the Parameters of GaAs:Si p-n Structures by Gyrotron Irradiation [Текст] / G.A. Sukach, V.V. Kidalov // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, №4. — P. 99-108.
http://essuir.sumdu.edu.ua/handle/123456789/36477 |
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| Language |
en
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