Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation
Electronic Archive of Sumy State University
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| Title |
Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation
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| Creator |
Гнатенко, Юрій Павлович
Гнатенко, Юрий Павлович Hnatenko, Yurii Pavlovych Опанасюк, Анатолій Сергійович Опанасюк, Анатолий Сергеевич Opanasiuk, Anatolii Serhiiovych Іващенко, Максим Миколайович Иващенко, Максим Николаевич Ivashchenko, Maksym Mykolaiovych Буківський, Петро Миколайович Букивский, Петр Николаевич Bukivskyi, Petro Mykolaiovych Фарина, Іван Олександрович Фарина, Иван Александрович Faryna, Ivan Oleksandrovych |
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| Subject |
Crystal structure
X-ray diffraction Defects Polycrystalline deposition Semiconducting II–VI materials |
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| Description |
CdSe polycrystalline films were deposited by a close-spaced vacuum sublimation method at different substrate temperatures(Ts) using glass slides as substrates. At Ts<673K the films have a structure with strong dispersion of grain size(d) (from0.1to0.3 μm). In this case the layer-by-layer mechanism determines the growth process of the layers. For Ts=873K they have a columnar-like structure with a clear growth texture and the average grain size d=3–4 μm. The films obtained at Ts>473K are n-type and only correspond to a single wurtzite phase. The crystallites are preferentially oriented with the(102) planes parallel to the substrate. At lower temperatures the films are bi-phase. The microstress level in CdSe films obtained at Тs=873 K (0.5 10 3) is considerably smaller than for the films deposited at Тs=773K (4 10 3). Increase of the value of Ts improves the stoichiometry of CdSe films. Analysis of the low-temperature photoluminescence(PL) spectra let us determine the nature and energy of point and extended defects in the investigated films. It was shown that the films contain Na(Li) and P residual impurities. The results of the structural and PL measurements showed that the CdSe polycrystalline films are of fairly good crystal and optical quality for Ts=873K and can be suitable for various applications. This research has been supported by the Ministry of Education and Science of Ukraine (Grant no.0110U001151) and by the National Academy of Sciences of Ukraine (Grantsnos.BС-157-15andB-146-15). |
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| Publisher |
Elsevier Ltd
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| Date |
2014-10-17T06:39:11Z
2014-10-17T06:39:11Z 2014 |
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| Type |
Article
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| Identifier |
Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation / Yu.P.Gnatenko, A.S.Opanasyuk, M.M.Ivashchenko, P.M.Bukivskij, I.O.Faryna // «Materials Science in Semiconductor Processing» 2014, V. 26, P.663-668
http://essuir.sumdu.edu.ua/handle/123456789/37075 |
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| Language |
en
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