Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs
Zhytomyr State University Library
Переглянути архів Інформація| Поле | Співвідношення | |
| Relation |
http://eprints.zu.edu.ua/8341/
http://spie.org/ |
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| Title |
Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs |
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| Creator |
Malyutenko, V. K.
Malyutenko, O. Y. Zinovchuk, A. V. Zakheіm, А. L. |
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| Subject |
QC Physics
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| Description |
We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device overheating and temperature gradients inside the structure. The MQW InGaN/GaN/sapphire blue LEDs are designed as bottom emitting devices where light escapes the structure through the transparent GaN current spreading layer and sapphire substrate, whereas the LED structure with high-reflectivity Ni/Ag p-contact is bonded to the thermally conductive Si submount by a flip-chip method. The measurements are performed with an IR microscope operating in a time-resolved mode (3-5 μm spectral range, <20 μm spatial and 10 μs temporal resolution), while scanning a heat emission map through a transparent sapphire substrate. We show how current crowding (which is difficult to avoid) causes a local hot region near the n-contact pads and affects the performance of the device at a high injection level. |
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| Publisher |
International society for optics and photonics
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| Date |
2005
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| Type |
Article
PeerReviewed |
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| Format |
text
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| Language |
uk
english |
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| Identifier |
http://eprints.zu.edu.ua/8341/1/GetPDFServletfiletype.pdf
Malyutenko, V. K. and Malyutenko, O. Y. and Zinovchuk, A. V. and Zakheіm, А. L. (2005) Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs. Proceedings of SPIE, 5941. 59411K-1. ISSN 9780819459466 |
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