Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices
Zhytomyr State University Library
Переглянути архів Інформація| Поле | Співвідношення | |
| Relation |
http://eprints.zu.edu.ua/8344/
http://iopscience.iop.org/ |
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| Title |
Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices
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| Creator |
Malyutenko, V. K.
Zinovchuk, A. V. Malyutenko, O. Y. |
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| Subject |
QC Physics
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| Description |
Electroluminescence power profiles and 2D micropatterns have been obtained from InAsSb/InAs planar LEDs tuned at several wavelengths within the 3–5 μm band. Light confined to a small region around the top opaque contact was observed (cw mode, I > 10 mA, T = 300 K). A computer simulation showed that the reason behind the decrease of the emitting area is the current crowding that ensures non-uniform injection into the active region. The effect becomes more apparent in longer wavelength devices (emitting areas of 3.4 and 4.2 μm emitting devices are related as >10 : 1), providing direct evidence that the current crowding is affected by the bandgap energy of an active layer. |
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| Publisher |
Institute of Physics
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| Date |
2008
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| Type |
Article
PeerReviewed |
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| Format |
text
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| Language |
uk
english |
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| Identifier |
http://eprints.zu.edu.ua/8344/1/Band%20gap.pdf
Malyutenko, V. K. and Zinovchuk, A. V. and Malyutenko, O. Y. (2008) Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices. Semiconductor Science and Technology, 23. 085004-1. |
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