Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs
Zhytomyr State University Library
Переглянути архів Інформація| Поле | Співвідношення | |
| Relation |
http://eprints.zu.edu.ua/8347/
http://www.journal-spqeo.org.ua/ |
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| Title |
Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs
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| Creator |
Sorokіn, V. М.
Konakova, R. V. Kudryk, Y. Y. Zinovchuk, A. V. |
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| Subject |
QC Physics
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| Description |
We present a setup and procedure of studying p-n junction–package thermal resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and LED chip are separated. |
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| Publisher |
Institute of Semiconductor Physics of Ukraine
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| Date |
2012
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| Type |
Article
PeerReviewed |
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| Format |
text
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| Language |
uk
english |
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| Identifier |
http://eprints.zu.edu.ua/8347/1/sqo%202012%20N2%20p124-128.pdf
Sorokіn, V. М. and Konakova, R. V. and Kudryk, Y. Y. and Zinovchuk, A. V. (2012) Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs. Semiconductor Physics, Quantum Electronics & Optoelectronics, 15 (12). pp. 124-128. ISSN 1605-6582 |
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